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| (R) STPS2H100 HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) FEATURES AND BENEFITS s 2A 100 V 175C 0.70 V s s s s NEGLIGIBLE SWITCHING LOSSES HIGH JUNCTION TEMPERATURE CAPABILITY GOOD TRADE OFF BETWEEN LEAKAGE CURRENT AND FORWARD VOLTAGE DROP LOW LEAKAGE CURRENT AVALANCHE CAPABILITY SPECIFIED DO-41 DESCRIPTION Axial Power Schottky rectifier suited for Switch Mode Power Supply and high frequency DC/DC converters. Packaged in DO-41, this device is intended for use in low voltage, high frequency inverters and small battery chargers. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM PARM Tstg Tj dV/dt Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Repetitive peak reverse current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage TL = 120C = 0.5 Value 100 10 2 50 1 1500 - 65 to + 175 175 10000 Unit V A A A A W C C V/s tp = 10 ms sinusoidal tp = 2 s square tp = 1s F = 1kHz Tj = 25C *: dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j - a ) July 2003 - Ed: 2A 1/4 STPS2H100 THERMAL RESISTANCES Symbol Rth(j-a) Rth(j-l) Junction to ambient Junction to lead Parameter Lead length = 10 mm Lead lenght = 10 mm Value 100 35 Unit C/W STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * VF ** Parameter Reverse leakage current Forward voltage drop Tests conditions Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Pulse test : * tp = 5 ms, < 2% ** tp = 380 s, < 2% Min. Typ. 0.2 Max. 1 0.5 0.86 0.70 0.92 0.78 Unit A mA V VR = VRRM IF = 2 A IF = 2 A IF = 4 A IF = 4 A 0.72 0.65 To evaluate the maximum conduction losses use the following equation : P = 0.62 x IF(AV) + 0.04 x IF2(RMS) Fig. 1: Conduction losses versus average current. PF(AV)(W) 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0.0 0.2 0.4 0.6 Fig. 2: Average forward current versus ambient temperature (=0.5). IF(AV)(A) 2.2 2.0 1.8 = 0.1 = 0.05 = 0.2 = 0.5 Rth(j-a)=Rth(j-I) =1 1.6 1.4 1.2 1.0 0.8 Rth(j-a)=100C/W T 0.6 0.4 T IF(AV)(A) 0.8 1.0 1.2 1.4 1.6 =tp/T 1.8 2.0 tp 2.2 0.2 0.0 0 =tp/T 25 tp 50 Tamb(C) 75 100 125 150 175 Fig. 3: Normalized avalanche power derating versus pulse duration. PARM(tp) PARM(1s) 1 Fig. 4: Normalized avalanche power derating versus junction temperature. PARM(tp) PARM(25C) 1.2 1 0.1 0.8 0.6 0.01 0.4 0.2 0.001 0.01 0.1 1 tp(s) 10 100 1000 Tj(C) 0 0 25 50 75 100 125 150 2/4 STPS2H100 Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum values). IM(A) 10 9 8 7 6 5 4 3 2 1 0 1.E-03 1.E-02 1.E-01 1.E+00 IM t Fig. 6: Relative variation of thermal impedance junction to ambient versus pulse duration. Zth(j-a)/Rth(j-a) 1.0 0.9 0.8 Ta=25C 0.7 0.6 = 0.5 Ta=75C 0.5 0.4 Ta=125C 0.3 0.2 = 0.2 = 0.1 Single pulse T =0.5 t(s) 0.1 0.0 tp(s) 1.E-01 1.E+00 1.E+01 =tp/T 1.E+02 tp 1.E+03 1.E-02 Fig. 7: Reverse leakage current versus reverse voltage applied (typical values). IR(A) 1.E+03 Tj=150C Fig. 8: Junction capacitance versus reverse voltage applied (typical values). C(pF) 100 F=1MHz VOSC=30mV Tj=25C 1.E+02 Tj=125C Tj=100C 1.E+01 Tj=75C 1.E+00 Tj=50C 1.E-01 Tj=25C VR(V) 1.E-02 0 20 40 60 80 100 10 1 VR(V) 10 100 Fig. 9-1: Forward voltage drop versus forward current (low level). IFM(A) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Tj=125C (typical values) Tj=125C (maximum values) Fig. 9-2: Forward voltage drop versus forward current (high level). IFM(A) 100 Tj=125C (maximum values) Tj=125C (typical values) Tj=25C (maximum values) 10 Tj=25C (maximum values) VFM(V) 1 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VFM(V) 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 3/4 STPS2H100 Fig. 10: Thermal resistance versus lead length. Rth(C/W) 120 Rth(j-a) 100 80 60 Rth(j-I) 40 20 Lleads(mm) 0 5 10 15 20 25 PACKAGE MECHANICAL DATA DO-41 (plastic) REF. C A C DIMENSIONS Millimeters Min. Max. 5.20 2.71 OB / Inches Min. 0.160 0.080 1.102 Max. 0.205 0.107 A B OD / OD / 4.07 2.04 28 0.712 C D 0.863 0.028 0.034 Ordering type STPS2H100 STPS2H100RL s Marking STPS2H100 cathode ring STPS2H100 cathode ring Package Weight Base qty 2000 Delivery mode Ammopack Tape & Reel DO-41 0.34 g 5000 EPOXY MEETS UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4 |
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